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| 2SC4327 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4327
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ (IC= 5A, IB=B 0.3A)
·Complement to Type 2SA1643
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
7
A
25
W
150
â
Tstg
Storage Temperature
-55~150 â
isc Websiteï¼www.iscsemi.cn
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