2SC4308 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4308
DESCRIPTION
·Low Noise
·High Gain Bandwidth Product
APPLICATIONS
·Designed for use in VHF wide band amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
20
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
300
mA
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
500
mA
0.6
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn