2SC4247 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4247
DESCRIPTION
·High Current-Gain Bandwidth Product
f_T= 4 GHz TYP. @V_CE = 10 V, I_C = 10 mA
·Low Noise
APPLICATIONS
·Designed for TV tuner , UHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
12
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
30
mA
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
15
mA
0.1
W
125
℃
-55~125
℃
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