2SC4237 Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Switching Power Transistor(10A NPN)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V(Min)
·Fast Switching speed
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1200
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
P_T
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
150
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 0.83 ℃/W
isc Product Specification
2SC4237
isc Website：www.iscsemi.cn