2SC4162 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4162
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
20
A
35
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn