2SC4135 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – High-Voltage Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4135
DESCRIPTION
·High breakdown voltage and large current capacity
·Fast switching speed
·Small and slim package
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SA1593
APPLICATIONS
·Power supplies, relay drivers,lamp drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
3
A
15
W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
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