2SC4131 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Epitaxial Planar Transistor(DC-DC Converter, Emergency Lighting Inverter and General Purpose)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4131
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.5V(Max)@ I_C= 5A
APPLICATIONS
·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
50
V
V_EBO
Emitter-Base Voltage
15
V
I_C
Collector Current-Continuous
15
A
I_CP
Collector Current-Peak
25
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
60
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn