2SC3990 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3990
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
35
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
12
A
250
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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