2SC3979 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3979
DESCRIPTION
With TO-220Fa package
High breakdown voltage
High speed switching
Wide area of safe operation
APPLICATIONS
For high breakdown voltage high-speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
T_C=25
T_a=25
VALUE
900
800
7
3
5
1
40
2
150
-55~150
UNIT
V
V
V
A
A
A
W