2SC3856-P Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Good Linearity of hFE

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO=180V(Min)
·Good Linearity of h_FE
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
4
A
130
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn