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2SC3852A Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Epitaxial Planar Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3852A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·DC Current Gain-
: hFE= 200(Min)@ IC= 0.5A
APPLICATIONS
·Driver for solenoid and motor, series regulator and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
25
W
150
â
-55~150 â
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isc & iscsemi is registered trademark
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