2SC3843 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3843
DESCRIPTION
·High Breakdown Voltage
·High Switching Speed
·Wide Area of Safe Operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for silicon high speed transistor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current- Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
20
A
75
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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