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| 2SC3838 Datasheet, PDF (1/2 Pages) Unisonic Technologies – HIGH-FREQUENCY AMPLIFIER TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3838
DESCRIPTION
·Low Noise
NF = 3.5 dB TYP. @VCE = 6 V, IC = 2 mA, f = 500 MHz
·High Current-Gain Bandwidth Product
fT = 3.2 GHz TYP. @VCE = 10 V, IC = 10 mA, f = 500 MHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
11
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
0.2
W
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
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