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| 2SC3834Y Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Good Linearity of hFE | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3834Y
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
3
A
50
W
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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