2SC3822 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V (Min)
·High Speed Switching
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converters
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 4.1 ℃/W
isc Product Specification
2SC3822
isc Website：www.iscsemi.cn