2SC3821 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3821
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_CEO(SUS) Collector-Emitter Voltage
V_EBO
Emitter-Base voltage
I_C
Collector Current-Continuous
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
450
V
400
V
400
V
7
V
5
A
1.5
A
40
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
3.0
℃/W
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