2SC3799 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3799
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V_(BR)CBO= 800V(Min.)
·Low Collector Saturation Voltage
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
800
V
V_CES
Collector-Emitter Voltage
800
V
V_CEO
Collector-Emitter Voltage
500
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
@T_a=25℃
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
3
W
100
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn