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| 2SC3749 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3749
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
25
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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