2SC3710A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH CURRENT SWITCHING APPLICATIONS

isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A
·Fast Switching Speed
·Complement to Type 2SA1452A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
2SC3710A
isc website：www.iscsemi.com
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