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| 2SC3709 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3709
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A
·Good Linearity of hFE
·High Switching Speed
·Complement to Type 2SA1451
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
30
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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