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| 2SC3690 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
15
W
2
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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