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2SC3677 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3677
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High voltage amplifier
·High-voltage switching applications
·Dynamis focus applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
6
A
25
W
150
â
Tstg
Storage Temperature Range
-55~150
â
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isc & iscsemi is registered trademark
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