2SC3676 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Voltage Amp, High-Voltage Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3676
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Small Cob
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High voltage amplifier
·High-voltage switching applications
·Dynamis focus applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
900
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.0
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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