2SC3659 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – HIGH VOLTAGE,HIGH POWER SWITCHING

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3659
DESCRIPTION
·High Breakdown Voltage-
: V_CES= 1700V (Min)
·Built-in Damper Didoe
APPLICATIONS
·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage
1700
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
8
A
Collector Power Dissipation
P_C
@ T_C=25℃
50
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature Range
-45~150
℃
isc Website：www.iscsemi.cn