2SC3642 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Definition Display Horizontal Deflection Output Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3642
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage and high reliability
·Fast switching speed
·Wide ASO
·NPN triple diffused planar silicon transistor
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh deflection display
·Horizontal deflection output application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Pulse
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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