2SC3640 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3640
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·Fast Speed
·High reliability
·Adoption of MBIT process
APPLICATIONS
·Switching regulator and high voltage switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current- Pulse
Pc
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
16
A
140
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
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