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2SC3590 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SC3590
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·Fast Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for high definition CRT display horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
12
A
IBB
Base Current-Continuous
Total Power Dissipation
PT
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
50
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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