2SC3585 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3585
DESCRIPTION
·Low Noise and High Gain
NF = 1.8 dB TYP. @f = 2.0 GHz
Ga = 9 dB TYP. @f = 2.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
10
V
V_EBO Emitter-Base Voltage
1.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
35
mA
0.2
W
150
℃
-65~150
℃
isc website：www.iscsemi.cn
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