2SC3583 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3583
DESCRIPTION
·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity.
·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz
Ga = 13 dB TYP. @f = 1.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~UHF band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
10
V
1.5
V
65
mA
0.2
W
150
℃
-65~150
℃
isc website：www.iscsemi.cn
1