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2SC3582 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3582
DESCRIPTION
·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity.
·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz
Ga = 12 dB TYP. @f = 1.0 GHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
V
1.5
V
65
mA
0.6
W
150
â
-65~150
â
isc websiteï¼www.iscsemi.cn
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