2SC3569 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

Inchange Semiconductor
Silicon NPN Power Transistors
Product SpecificationI
2SC3569
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
500
400
7
2
4
1
15
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃