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2SC3566 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3566
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
APPLICATIONS
·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching reglators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2.5
A
1.5
W
25
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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