2SC3561 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Switching Speed

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3561
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 450V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ T_a=25℃
TJ
Junction Temperature
0.5
A
20
W
2
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn