2SC3519 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,130W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SC3519/A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V_(BR)CEO= 160V(Min)-2SC3519
= 180V(Min)-2SC3519A
·Good Linearity of h_FE
·Complement to Type 2SA1386/A
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
2SC3519
160
V_CBO
Collector-Base
Voltage
V
2SC3519A
180
2SC3519
160
V_CEO
Collector-Emitter
Voltage
V
2SC3519A
180
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
130
W
150
℃
-55~150
℃
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