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| 2SC3514 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
0.1
A
Collector Power Dissipation@ Ta=25â
1.5
PC
W
Collector Power Dissipation@TC=25â
10
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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