2SC3503 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3503
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Silicon NPN epitaxial planar transistor
·Small reverse transfer capacitance and excellent high
frequency characteristic
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For high definition CRT display ,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25℃
TJ
Junction Temperature
0.1
A
7
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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