2SC3502 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V_(BR)CEO = 200 V
·Complement to Type 2SA1380
APPLICATIONS
·Designed for ultrahigh-definition CRT display, video out-
put applicaitons
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
200
V
V_CEO
Collector-Emitter Voltage
200
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
0.1
A
I_CM
Collector Current-Peak
Collector Power Dssipation
T_a=25℃
P_C
Collector Power Dssipation
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
0.2
A
1.2
W
5
150
℃
-55~150
℃
isc Product Specification
2SC3502
isc Website：www.iscsemi.cn