2SC3481 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3481
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current- Continuous
5
A
I_CP
Collector Current-Pulse
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
16
A
120
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn