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| 2SC3459 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – For Switching Regulators | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3459
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4.5
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
90
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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