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| 2SC3425 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR SILICON NPN DIFFUSED TYPE (PCT PROCESS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3425
DESCRIPTION
·CollectorâEmitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 0.1A
·Switching Time
: tf= 1.5μs(Max.)@ IC= 0.5A
APPLICATIONS
· Switching regulator and high voltage switching applications
High speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.8
A
ICM
Collector Current-peak
1.5
A
IB
Base Current
0.5
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
Ta=25â
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
1.2
W
10
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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