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| 2SC3422 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3422
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 40V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1359
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
·Suitable for output stage of 5 watts car radio and car stereo
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
40
V
VCEO Collector-Emitter Voltage
40
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
1
A
10
W
1.5
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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