2SC3421 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3421
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V_(BR)CEO= 120V(Min)
·Complement to Type 2SA1358
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Suitable for driver of 60 to 80 Watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
120
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
1
A
I_BB
Base Current-Continuous
Collector Power Dissipation
@ T_C=25℃
P_C
Collector Power Dissipation
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.1
A
10
W
1.5
150
℃
-55~150
℃
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