2SC3419 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3419
DESCRIPTION
·Low Collector Saturation Voltage
·High power dissipation
·Complementary to 2SA1356
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Medium power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
40
V
VCEO Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25℃
TJ
Junction Temperature
0.8
A
5.0
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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