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| 2SC3416 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3416
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V (Min)
·Complement to Type 2SA1352
APPLICATIONS
·Designed for color TV chroma output, high-voltage driver
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
0.1
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
1.2
W
5
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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