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| 2SC3412 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3412
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V (Min)
·High Power Dissipation
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1300
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
50
W
150
â
-45~150 â
isc Websiteï¼www.iscsemi.cn
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