2SC3376 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3376
DESCRIPTION
·
·Collector-Emiiter Breakdown Voltage-
: V_(BR)CEO= 800V(Min.)
·High Speed Switching
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
900
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
3
A
I_CM
Collector Current-Peak
5
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
1
A
60
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn