2SC3357 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3357
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., G_a = 8.0 dB TYP.
@V_CE = 10 V, I_C = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G_a = 9.0 dB TYP.
@V_CE = 10 V, I_C = 40 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
V
3.0
V
0.1
A
1.2
W
150
℃
-65~150
℃
isc Website：www.iscsemi.cn