2SC3356 Datasheet, PDF (1/5 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3356
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., G_a = 11 dB TYP.
@V_CE = 10 V, I_C = 7 mA, f = 1.0 GHz
·High Power Gain
MAG = 13 dB TYP.
@V_CE = 10 V, I_C = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
12
V
V_EBO Emitter-Base Voltage
3.0
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.1
A
0.2
W
150
℃
-65~150
℃
isc Website：www.iscsemi.cn