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2SC3349 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Switching Speed | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3449
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
3
A
80
W
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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