2SC3310 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3310
DESCRIPTION
With TO-220Fa package
High collector breakdown voltage
Excellent Switching times
APPLICATIONS
Switching regulator
High speed DC-DC converter
High voltage switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current (pulse)
I_B
Base current (DC)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
500
400
7
5
7
1
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W